This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.


Other Parts Discussed in Thread: CSD18543Q3A, CSD16340Q3, CSD16323Q3, CSD16327Q3, CSD17304Q3, CSD17308Q3, CSD17309Q3


We used this Mosfet (CSD18543Q3AT) for one of our designs, in the datasheet the Gate-to-source threshold voltage is 1.7V. Our control circuit provides 2.8V as a gate to source voltage, but we noted that there is a voltage loss of 1V across the Mosfet at the entire current range and the MOSFET will be heated. do you have any solution for limiting the voltage loss across the MOSFET without changing the control circuit? 

Best regards 

  • Hello tareq,

    Thanks for your interest in TI FETs. The CSD18543Q3A on resistance is specified at a minimum VGS = 4.5V. You must provide VGS >= 4.5V or we cannot guarantee the on resistance of the FET. As can be seen in the rds(on) vs. VGS curve on page 1 of the datasheet, rds(on) increases exponentially when VGS < 4.5V. I'm afraid I don't have a quick fix unless you have 5V available to drive the gate of the FET. Can you use a FET with lower maximum VDS rating such as 25V or 30V? TI has one 25V FET in the same 3x3 SON package, CSD16340Q3, that has on resistance specified at VGS = 2.5V. We have a number of 25V and 30V FETs with on resistance specified at VGS = 3V. A listing is provided below.