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UCC5390-Q1: Loss evaluation and temperature rise

Part Number: UCC5390-Q1

Dear all

I designed a driver board with UCC5390-Q1 and noticed that the temperature rise on the IC was higher than my expectation. 

Below is the circuit schematic. The PCB layout basically follows the recommendation.

Testing conditions:

The measured VCC2 and VEE2 were stable at 14.2 V and -3 V. The PWM applied was 1 MHz at a 50% duty cycle.

The load was a SiC device with a nominal Qg around 35 nC and an internal gate resistance about 3.5 Ω. The device was left open circuit with no Vds applied. Expected total output Pd shall be around 0.7 W.

Room temperature about 25˚C. Still air. Temperature was measured with a thermal cam.

 Test Result 1: Rg applied was 10 Ω. GS waveform was correct but the final IC case top temperature reached 75˚C (input side of IC was cool). All surrounding objects have a lower temperature.

 Test Result 2: Rg was removed and shorted. GS waveform was correct but the final IC case top temperature reached 73˚C (input side of IC was cool). All surrounding objects have a lower temperature.

My questions are

1) From the application note, the calculated IC output loss for test 1 should be 0.7W/2 * (0.7/(0.7+13.5)+0.13/(0.13+13.5)) = 0.02 W. Is this 50˚C temperature rise normal? Or do I make a mistake on the evaluation?

2) The IC output loss in test 1 (total external Rg  10+3.5) shall be greatly increased in test 2. Why was the final IC case temperature to be almost the same?

  • The schematic in the original post cannot be seen. It basically follows the Figuer27 in the TI datasheet, but with 3V3 Vcc1, 15 V Vcc 2 and -3V Vee2.

  • Hi Shuxin,

    Thanks for reaching out!

    1)  Your calculation looks good to me.

    2)  I agree, the current consumption should be increased (and therefore higher temperature), but the temperatures should not be that high in your application.

    - So I can have a better idea of what is going on here, could you please try re-uploading your schematic by using the "Insert/Edit Media" option?

    - Also, please check that the SiC device is not broken / burned out, and let me know.

    Thanks!

    Aaron Grgurich

  • The schematic is inserted and attached below.

    The used SiC device is new and functioning. The SiC dissipated power also matches the datasheet. 

    4478.1.tif4478.1.tif

  • Hi Shuxin,

    I rechecked the calculations and the temperature that you are reading is much higher than normal.

    Could you help me out by providing some more details of your layout and test setup?

    Also more details on SiC device may be useful; if there is something wrong with it, that could influence temperature greatly. 

    Thanks,

    Krystian Plaskota