• State TI Thinks Resolved
  • Locked Locked
  • Replies 1 reply
  • Answers 1 answer
  • Subscribers 62 subscribers
  • Views 545 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LMG3410R050: Paralleling GaN devices

Hao Wen
Prodigy 200 points
Part Number: LMG3410R050

Hello,

I would like to parallel two TI GaN devices for both soft switching and hard switching. In the datasheet, it is suggested to add a small decoupling inductor for hard switching applications. I am not sure where to put this inductor so can you show me the location for this inductor and what is value of this inductor? Also, is there anything else I should pay attention to when designing the board? Thank you!

  • 0
    TI__Genius 16390 points

    Hello Hao,

    The following could serve as an example of the placement of the decoupling inductor. The recommended value is 1uH based on simulation and test results. Based on the slew rate and prop delay difference, you can increase the value if needed.

    May I know how much phase current is in the application?

    Regards,