Dear Sir
I have developed a half bridge daughter card using LMG3410R070rwht GaN Device. Initially this Gan half bridge board was tested in boost converter configuration (synchronous switching). The board was loaded upto 1kW( 200V input, 400voutput, 100khz, 50% duty cycle, 5A input current) and its operation was fine. Now we are planning the same half bridge card for a 1.1kW totem pole converter. For 50Hz switching, combination of STW77N65M5 MoSFET and UCC27714D MoSFET driver is used.
We used the same half bridge for a totem pole converter but we have seen some failures in the GaN device. We have provided constant duty (50%) with a dead time of 120ns. We are getting boost output but failure above 150V. also the shape of the output is not satisfactory. Attached the image of the output voltage(green). Kindly suggest…