Hello,
I want to use LMG1210 as a half-bridge driver in our application. Our switching frequency is 1Mhz and external MOSFETs are required to carry load current of 2A.
If I use recommended bootstrap circuit from the datasheet then, high side Vgs will be around ~4.5V (5V internal LDO output – 0.4V bootstrap diode drop – 0.1V Mosfet drop). 4.5V will not be sufficient to fully turn ON MOSFET and it will be hanging around Miller's plateau. I don't wish to GaN FET because of high cost.
I was looking at the external synchronous bootstrap circuit shown in the attachment. I have 2 questions as below:
1. Can I give a voltage higher than 5V (10V for ex.) to fully turn on the external high side MOSFET?
2. Is it necessary to use GaN FET as the synchronous switch?
Thanks in advance.