Hi, TI experts
1. This device claims 2MHz switching capability, how to conclude this value? Due to all the internal latency inside(e.g. driving delay, dead time)?
If possible, I’d like to have a formula, or a figure showing how to calculate.
2. During high-frequency switching dead-time, I'd like to learn if a Schottky diode is inside to bypass body diode, to optimize reverse recovery and voltage ringing stress?
As you know if a normal silicon body diode is used for switching, the reverse recovery too serious to be applied in a high-frequency CCM buck converter.