I went through a couple TI training videos and Blog posts from Brett Barr. He explained the concept very clearly and it was very helpful.
Brett mentioned that all the newer TI MOSFET SOA curve is based on data from measurement, but he didn't say anything about the measurement condition, and I couldn't find the information in the datasheet.
Would you please explain what the measurement condition is? The things I am looking for is cooling method, size and weight of copper, RthJA etc.
Take CSD18563Q5A as an example, from the SOA curve below, what is the DC line for a single pulse? Anything greater than 100ms? or it's a true DC power dissipation? For the DC curve, I found it difficult to believe that this device is capable of dissipating 30W continuously without adequate cooling.
Thank you very much