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CSD13381F4: Switches & multiplexers forum

Part Number: CSD13381F4


In CSD13381F4 12 V N-Channel FemtoFETTm MOSFET Top view a body diode is simulated between the source and the drain which is common and available in all the mosfets.

However, a diode between gate and source of the mosfet is also simulated.

Could you please explain the functionality of this diode (between gate and source) and if it is available in all the mosfets or only this particular part number?

Leakage current could appear between gate and source if the source voltage is high and the gate is connected to ground for an off state of the mosfet?

Kindly advise.


  • Hi Rita,

    Thanks for your interest in TI FETs. Some of our smaller devices intended for load switch or battery protection FETs include gate-source ESD protection either as a single-ended diode or back-to-back diodes. The CSD13381F4 has single-ended ESD protection structure that passes > 4kV HBM & > 2kV CDM and is very low leakage. Care needs to be taken not to apply a negative VGS to avoid forward biasing the diode. Please refer to this technical article for more details on gate ESD protection in TI FETs.


    John Wallace

    TI FET Applications