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LMG5200: LMG5200 evaluation boards

Stefan Rahtz
Prodigy 110 points
Part Number: LMG5200
Other Parts Discussed in Thread: TIDA-00909, TIDA-00913, BOOSTXL-3PHGANINV, , PMP20873, LMG1205, LMG1210

Hello,

I ve got a simple question about the LMG5200 evaluation boards / reference designs.

As I saw, there are three different types available.

Its the BOOSTXL-3PhGaNInv, TIDA-00909 and the TIDA-00913.

What are the differences between them?

Thank You.

Stefan

  • 0
    TI__Expert 3225 points
    Hello Stefan,

    Thanks for your interest in our reference designs. To answer your question:

    1. BOOSTXL-3PhGaNInv is an EVM but not a TI design. It provides the basic hardware design for the inverter.

    2. TIDA-00909 is a TI design that focuses on high speed motor drives. It uses BOOSTXL-3PhGaNInv hardware as a platform, but also leverages the C2000 launch pad. This TI design is mainly focusing on the efficiency improvement with GaN. When you look into the design guide, it has the comparison of losses at different frequency, and associated test results.

    3. TIDA-00913 is a TI design that mainly focusing on the shunt based current sensing in this application, and it also uses BOOSTXL-3PhGaNInv EVM. In this design, the guide is introducing more about the current sensing, especially in a high CM noise environment. GaN brings high dv/dt and the current sensor INA-240 is able to help with the CM immunity.

    The two TIDAs use the same hardware but have different focuses. Please let me know if you have any other questions.

    Thanks and regards,
    Lixing
  • 0 in reply to Lixing Fu
    Prodigy 110 points
    Hello Lixing,

    thanks for reply me.
    I ve bought the BOOST-3PhGaNInv last week, but I was wondering about the different types.
    I saw, the TIDAs are not available for sale, but is there a way to get them in the future?
    At the moment I'd like to gather experience in using GaN devices. But it seems they are not much different to MOSFETs.

    Best Regards.

    Stefan
  • 0 in reply to Stefan Rahtz
    TI__Intellectual 805 points
    Hello Stefan,

    Yes, LMG5200 EVM and BOOST-3PhGaNInv should get you familiar with GAN. GaN FET has many advantages over Si MOSFET like zero reverse recovery, which allows using GAN FETs in half-bridge configuration, much less output and gate charge losses, which allows for much higher switching frequencies and higher slew rates. As a result, it allows for higher switching frequency converters, and new topologies that can use hard-switching half-bridges to achieve higher power density and efficiency at the same time. Such topologies include totem-pole PFC(PMP20873) and Isolated Half-bridge DC/DC converter (LMG5200POLEVM-10).
    Of course, these high slew rates are only possible with low parasitics of the packages as well as drive loops. TI's integrated driver approach makes sure that users can take the highest advantage out of GAN by integrating driver and minimizing all the parasitics such as common source and gate loop inductances.
    I hope this gives you a good start for GAN evaluation.

    Regards,
    Serkan
  • 0 in reply to Serkan Dusmez
    Prodigy 110 points
    Dear Serkan,

    thank you for reply me.

    First time I heard about the LMG5200 is 2 and 1/2 year ago.
    Since then I planned to get these devices, but no time to deal with, because my work and my study cause a lot of work load...
    But now I got my own BOOST-3PhGaNInv... -and it looks good!

    As I saw, there is another device, the driver LMG1205. It seems to be similar to the LMG5200, but without the internal power stages.
    So it should be possible to create converters and motor drivers with different characteristics.
    The higher operating frequencies should make it possible to use smaller capacitors and inductors.
    But the harder switching characteristics could cause emi problems.
    Very often you can find in the literature suggestions like the usage of soft recovery diodes and reduction of slew rates to prevent emi problems. But these will result in higher losses.
    I just saw the layout considerations for the LMG5200. All like I would do this. But the short return pass underneath the device is connected through vias. I think these vias could be very problematic, because the copper cross section is reduced. I think it should not result in problems if adding more vias.
    So I will watch for the "golden middle way" ...
    For the capacitors I plan to use X7R types and for the inductors ER core types. I think the choice should be o.k. , or are there better solutions?
    In case of using the LMG1205 device I like to use the GS61008P for the power stage.

    Thank you and Best Regards.

    Stefan
  • 0 in reply to Stefan Rahtz
    TI__Expert 3225 points
    Hi Stefan,

    Thanks for the detailed information. I work together with Serkan.

    For vias on the PCB, they are critical paths to conduct the current from top to the mid-layer. As long as you have enough vias according to your load current, you should be okay. For the current flow on the top layer, if you are concerned by the reduced area caused by the vias, you can have the vias filled so it can still have large area of conduction.

    For the passive components, X7R is a good choice and please make sure you have the magnetics chosen accordingly to the frequency you are planning to work at.

    LMG1205 is a good choice in WCSP package, and we recently also released another GaN driver, LMG1210 in QFN package. This driver supports two independent PWM inputs or single PWM input with adjustable dead time. It features higher frequency, smaller minimum pulse width and smaller rise/fall time to support operation up to 200V. It has CMTI up to 300V/ns to realize ultra high switching noise immunity. You can look into this one as well to see if it fits your application.

    Please let us know if there is anything that we can help.

    Thanks and regards,
    Lixing