• State TI Thinks Resolved
  • Locked Locked
  • Replies 1 reply
  • Answers 1 answer
  • Subscribers 62 subscribers
  • Views 651 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

CSD19535KTT: what is the IDDS (drain-to-source-leakage-current) range for CSD19535KTT

John Chou62
Intellectual 1950 points
Part Number: CSD19535KTT

Hi Team,

customer using CSD19535KTT and found some pcs that due to leakage current too high and there is a remaining voltage present even with the FET is turned off.

resulting the output voltage will still turn on the remaining circuit components when it suppose to be shutdown

although it's specified in the DS 5.1 Electircal Characteristics 

the IDDS (drain-to-source-leakage-current)  MAX is 1uA

can we check with the design team on 

1. what's the typical value? and how many std deviation is the cut off point? (distribution bell curve)

2. it's observed that the fail IC leakage is 0.2uA compare to 0.02uA normal IC, what the expect Max value? (1uA in the DS but really this big?)

this is to help to clarify and make their design team to decide the work around to resolve such condition.

Thanks for the help

  • 0
    TI__Expert 6855 points
    John,

    Thanks for the question.

    As the customer has seen a difference in performance we need to investigate if there is an issue with the device or other circuit factors.

    This discussion needs to be taken off a public forum, I will contact you separately.