Hi
Our customer are evaluating TLV62085 on their board now. They found VIN<VOUT situation at start up.
(The measured voltage between VIN and VOUT is more than 0.3V for 4ms.)
At the specification,the Max rating of SW is defined VIN+0.3V. However it exceeded at start up.
The popular solution for this condition is added the diode to bypass the current flow from VOUT to VIN. Another way is added the series diode to before VIN.
We understand the those solution but the customer ask about more detail of this device as below.
1. How much current can be flowed at the parasitic diode of internal FET? They will add the external diode that Vf is 0.3V or more. So,they are concerned that current flows the internal diode.
2. It will be ok if that current is smaller then specification even if the current flow the parasitic diode. Is my understanding correct?
3. If input voltage is enough higher than (VF +VOUT), the addding the series diode is better for this case?
Best Regards,
Koji Hamamoto
