• State Resolved
  • Locked Locked
  • Replies 2 replies
  • Answers 1 answer
  • Subscribers 62 subscribers
  • Views 466 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

BQ25713: BATDRV voltage range and P-MOSFET maximum VGS

Elder Costa17
Expert 2825 points
Part Number: BQ25713
Other Parts Discussed in Thread: CSD25402Q3A

Hello,

I am following the EVM to make my design. Thus I used CSD25402Q3A as the BATFET. But in my desing VSYS is 12V nominal (10V-15V range) and the VGS range of this FET is +/-12V. The description of BATFET pin mentions its voltage to be 10V below VSYS when in ideal diode mode but this information is nowhere else in the data sheet so I would like to confirm if it is safe to use this FET.

  • 0
    TI__Mastermind 25800 points
    Hey Elder,

    You may refer to the VBATDRV_ON parameter in the Electrical Characteristics table of the datasheet for reference. This will give the minimum and maximum values of the VGS applied on the BATFET.

    With the source at SYS, the BATFET can be driven below it by a maximum of 11.5V as per the datasheet which should fall within the specification of your selected MOSFET.


    Regards,
    Joel H
  • 0 in reply to Joel Hernandez II
    Expert 2825 points

    Hi, Joel.

    This VBATDRV_ON parameter is a little confusing as it is not defined in the table. However, I have just looked at the data sheet and the information is there but somewhat spread across the data sheet (the pin functions table, electrical specs and the block diagram on section 9.2). May I suggest a clearer definition is added to the electrical specs?

    Anyway, you solved my question. As usual, great and timely support.

    Thank you very much.

    BR

    Elder.