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CSD86311W1723: in Bidirectional Power Switch design

Bill Wu
Prodigy 550 points
Part Number: CSD86311W1723

The question is about using CSD86311W1723 in a Bidirectional Power Switch as in "Figure 7. BPS Configuration – Back-to-Back Connected N-MOSFETs in Common-Source Configuration" of TI Appnote slva948.pdf for Vin in the range of 1.8V to 3.8V and small current in the range of 100nA to 15mA.

This power switch is used in a test board to switch on and off the power to the test circuit. It seems that this Dual N-Channel Power MOSFET CSD86311W1723 was damaged sometimes. The question is whether this could be caused by 1) possible short-circuit/startup inrush current resulted in thermal protection problem, 2) ESD, or something else.

Any suggestion to the reason of the damage?

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  • 0
    TI__Mastermind 29525 points
    Hi Bill,
    Thanks for reaching out. Can you determine the failure mode of the dual FET (short, open, etc.)? The FET can be damaged by overcurrent and/or exceeding the voltage ratings from drain-source or gate-source of the device. Of course, FETs are susceptible to ESD damage as well. Since we're both TI employees, I am going to close this thread and continue this discussion via email.