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Part Number: LM74670-Q1
I have a concern about the use of N-Ch MOSFET as the pass element with the diode controller.
As the source/substrate is now (according to datasheet and AN) connected to V++, does that affect channel resistance. I wonder, if there are any comparisons made for operating characteristics, for both operating conditions - Source/substrate connected to V- and in reverse Source/substrate connected to V+.
Data/graphs will be most helpful.
If i understand your question correctly, when source is connected to V- side, device will not power up because body diode of N-Channel MOSFET is reverse biased and no power to the IC.
Source needs to be connnected to positive side of the power path.
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In reply to Karikalan Selvaraj:
Thanks for the reply. I am sorry that I was not able to present the question in a better format.
I do understand that under LM74670-Q1 controller the N-MOSFET will only turn when the source is connected to V+ supply . My question relates to the lowest Rds resistance of the selected N-MOSFET under LM74670-Q1 control vs. the lowest Rds resistance, when the MOSFET is placed in a conventional manner (and without LM7470-Q1 control) with source connected to V- supply. I suspect that the selected N-MOSFET will display greater Rds resistance under LM74670-Q1 control and consequently resulting in greater thermal loss.
In reply to Sudhir Gupta:
Can you please explain with a figure (hand drawn):
1. selected MOSFET with LM74670-Q1
2. conventional MOSFET ?
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