Hi team,
Our customer would like to know what Gate Resistance Value is needed in their application for LMG1025QDEETQ1.
Here's the information we got from the customer:
The customer is using GanFET driver “LMG1025QDEETQ1” to drive the GanFET “GS61004B-MR”
As per datasheet information, it is recommended to use at least a 2-Ω resistor at each OUTH and OUTL to avoid voltage over stress due to inductive ringing.
For customer application, suggest the minimum and maximum gate resistance value.
Drive pulse characteristics :
Rise time/Fall time = ~1nsec.
Pulse-ON time(Max) = 20nsec
Pulse repetition time = 1msec
Pulse shape = square pulse
Parasitic components of GanFET “GS61004B-MR” :
Lds (drain to source inductance in ON state) = 1.3nH
Ls (source inductance) = 450pH
Lg_loop (gate loop inductance) = 1.2nH
Internal gate resistance = 0.9 Ohm
Please let me know if you have any questions for the customer.
Thanks,
Jonathan
