ISO5852SDWEVM-017: Usage for SiC-MOSFET

Hi Team,

We would like to driver CAS480M12HM3(SiC-MOSFET) by the circuit base on ISO5852SDWEVM-017.

Therefore, we have four questions.

[Q1]

If you have the test report(data) driving SiC-MOSFET, could you please send me the data?

Because, we would like to the actual waveform at EVM.

(switching frequency and Dead time between OUTH and OUTL, Behavior of Desat function, VCC1 and VCC2 voltage, other device pins etc.)

[Q2]

Could you please let us know the maximum switching frequency value if ISO5852SDWEVM-017 have limit value?

And, could you please let us know the setting method of suitable switching frequency?

[Q3]

Could you please let us know the minimum Dead time between OUTH and OUTL if ISO5852SDWEVM-017 have limit value?

And, we understand that ISO5852S can’t set the dead time, but could you please let us know the setting method of suitable dead time?

[Q4]

We guess that when NI+ and IN- are switched (“From High to Low” or “From Low to High”), small through current occurs at ZXTN2010ZTA and ZXTP2012ZTA on EVM.

Therefore, could you please let us know the Countermeasures to prevent noise and abnormal behavior of supply voltage(VCC2)?

Regards,

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