for TMP464 remote sense function, do we have any restriction on the SOC on die diode process? such as it should be 10nm or higher?
This thread has been locked.
If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.
We have tested on-die junctions built on small geometry processes for our customers. I haven't encountered one that is not viable as a temperature sensor; there is simply reduced accuracy. Some of this inaccuracy can be improved by the Beta Compensation feature of TMP43x and TMP44x devices. All junctions will benefit from N-Factor calibration, which is supported by TMP464. After the sensor is optimized, there will still be error due to junction-to-junction variation. This junction error will have a +/- magnitude that is cumulative with the TMP464's +/- 0.75C specification.
The only junctions I've observed that are not compatible were built on high-power processes for amplifiers and RF. These junctions had too much capacitance. Excessive capacitance always causes a negative error, as seen in TMP464 datasheet. The error due to capacitance becomes unreasonable quickly above a couple nF.