I am currently designing a sensor using DRV5023BIQDBZT Hall Sensor from TI.
We need to protect the sensor as much as we can from anything that could occur during manufacturing or installation process, because it is used in a safety device.
I see in the datasheet that it has integrated reverse polarity protection up to -22V. In my application, the sensor is powered with 24V. So a reverse polarity would cause the reverse voltage to be at least -24V, out of the limits of the sensor.
I added a Schottky diode on Vcc rail, and a TVS between Vcc and Gnd to protect from reverse polarity and overvoltage.
I was thinking about adding a external diode in parallel with the body diode of the NMOS (between OUT and GND) so that reverse current is shared across the diodes, and excess heat generation is eliminated.
Is this a suitable solution ? Is there any reason I should not do that ? Could it influence the behavior of the sensor ?
Thank you in advance for your help.