Because of the Thanksgiving holiday in the U.S., TI E2E™ design support forum responses may be delayed from November 25 through December 2. Thank you for your patience.

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

SN74LV4052A-Q1: SN74LV4052A-Q1 internal structure

Part Number: SN74LV4052A-Q1
Other Parts Discussed in Thread: SN74HC4852-Q1, SN74HC4852, TS3A5017-Q1

Hello team, I am trying to sense 4-phase current and 4 number of inductor current by using SN74LV4052A-Q1 as below in datasheet.

 However I worries about signal distortion in case they add RC filter on the input/output side because MUX R_ds_on is big (100 ohm).

Could you give me the following information? I couldn't find these in the datasheet.

1. Internal model inside the device

2. Resistance range when they add RC filter input and output of the device (I think there is not tight resistance range)

3. Output pin maximum current

4. How output pin is connected with VCC (=internal structure on the output side)

Regards,

Oliver Kim

  • Hello team,

    Because of an issue, SN74HC4852-Q1 may be used instead of SN74LV4052A-Q1. But I am not sure whether it can be used in their application.

    I will contact you after having more conversation with my customer.

    You don't need to answer my question.

    Thank you.

    Regards,
    Oliver Kim
  • Oliver,

    Both the SN74HC4852 and the SN74LV4052A-Q1 devices have a similar internal structure.  Both of these devices are passive FET switches and do not include any buffering.  

    The type of FET switch they have inside is called a transmission gate with an NMOS FET in parallel with a PMOS FET to help it have a more flat Ron response across input voltage.  This structure also allows the input voltage to go from 0V to Vcc where  a single NFET switch can only support 0 - (Vcc-Vgs).  More information can be found in this application note.

    http://www.ti.com/lit/pdf/szza030

    The app note above also shows a way to model the passive FET switch.

    There are models available for the TS3A5017-Q1 device which is also a transmission gate structure 2-channel 4:1 device.

    Thank you,

    Adam