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PMP20178: LM5145RGYR Reference Design

qiuhu liu
Intellectual 280 points
Part Number: PMP20178

I used PMP20178 as a reference, and I find that the high side MOS  and low side MOS are different, can I use the same MOS for high side and low side.I also find there is a diode STPS6M100DEE-TR between sw and PGND, and I don't understand what it used for. Thanks.

  • 0
    TI__Intellectual 1235 points

    For a high step down ratio like 48Vin to 5Vout, the duty cycle is around 10%. The high-side MOSFET is generally sized to minimize switching loss, while the low-side MOSFET is chosen to minimize conduction loss. Depending on the MOSFET characteristic, you may find a device suitable for both low-side and high-side.

    The diode is used to minimize loss during the dead time between high-side and low-side conduction. Otherwise the body diode of the low-side MOSFET conducts at a higher losses.