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TMS570LC4357: How to work EEPROM and Flash delete algorithm

Emre Durak
Prodigy 115 points
Part Number: TMS570LC4357

Hi,

(PELASE THİNK THİS AS GENERAL LOGİC OF EEPROM AND FLASH MEMORY. NOT DEVİCE SPESİFİC)

How to work logic of erase an EEPROM and Flash gate delete algorithm?

1- Do I have to erase before write anything in EEPROM. (Lets say I write 8 byte to an address and I want to write again(over-write) without delete the current data) Can I do it, or I have to delete first?

2- Same question in Flash Memory

3- EEPROM uses NOR gates, and Flash Memory uses NAND gates. How to delete a cell in this system. Lets say I am using a nor gate and I have "1" inside in that. So whether I give 0 or 1, the answer will be always 0. Lets say I am using NAND gate flash memory and I have "0" in my cell. Wheter I use 0 or 1 the answer always will be 1. How can I go 1 to 1 in nor gates and How can I go to 0 to 0 in nand gates.

  • +1
    TI__Guru 63035 points

    Hi Emre,

    The flash technology used in TMS570LC4357 is NOR, and it is applicable for both Flash memory and EEPROM emulation. So, i mean that entire non-volatile flash memory (Bank-0, Bank-1 and Bank-7(EEPROM Emulation)) uses NOR gates.

    As these memories uses NOR flash the default memory values after erase is all 1's. So, the write operation can make the bit from 1 to 0 and the write operation cannot make the bit from 0 to 1. So that means if you have any requirement to make any particular location from 0 to 1 then you have to erase the corresponding sector and need to write the data.

    Emre Durak said:
    1- Do I have to erase before write anything in EEPROM. (Lets say I write 8 byte to an address and I want to write again(over-write) without delete the current data) Can I do it, or I have to delete first?

    Yes, to write any data to the EEPROM emulation you have to erase before write data into the memory like same as flash. 

    But there is another option, that is you can use TI-FEE library. If you use this library, then you no need to do any erase operations. The erase operations are handled in background by FEE library.

    For example, here data is handled in terms of blocks. And i can just give block number and data for write operation and i can just give the data n number of times without doing any erase and after that i can just get latest data by just giving block number for read operation.

    For more details just refer FEE user guide and below threads:

    (18) TMS570LS3137: Data backup inside FEE module - Arm-based microcontrollers forum - Arm-based microcontrollers - TI E2E support forums

    1830.TI FEE User Guide.pdf

    Emre Durak said:
    2- Same question in Flash Memory

    As i said the entire non-volatile memory is built upon the NOR-flash memory same thing will be applicable here.

    NOR flash the default memory values after erase is all 1's. So, the write operation can make the bit from 1 to 0 and the write operation cannot make the bit from 0 to 1. So that means if you have any requirement to make any particular location from 0 to 1 then you have to erase the corresponding sector and need to write the data.

    Emre Durak said:
    3- EEPROM uses NOR gates, and Flash Memory uses NAND gates.

    No, that's not correct. In this device both memories made from NOR gates.

    --

    Thanks & regards,
    Jagadish.