Part Number: ONET8551T I am testing a number of photoreceivers assembled from the ONET8551T and a photodiode, using long rectangular optical pulses (e.g. 100 ns duration) with a low duty cycle (e.g. 100 kHz repetition rate). The measured transimpedance…
Part Number: ONET8551T Other Parts Discussed in Thread: LMH32401 Hello,
We had a custom APD development and due to architectural reasons of this new APD we would like to interface this to the TIA via the Cathode unlike the usual p side or anode. We would…
Part Number: ONET8551T Hello Team
can You comment on tha customer question:
Can we use Chip as RF signal amplifier without using input photodiode? We would like to use a 50 ohm source instead of a photodiode.
thanks and regards
Part Number: ONET8551T Hello,
I was hoping to learn more about the input impedance looking into the ONET8551T from the PD (so IN/FILTER). We are intending to first design a circuit to emulate the PD current for initial tests prior to connecting the ONET8551T…
Part Number: ONET8551T Hi Team,
In ONET8551T datasheet, we mentioned that
"For PIN diode applications, TI recommends grounding the BW0 pin. However, for higher bandwidth, the BW1 pin, or both the BW0 and BW1 pins, can be grounded. To reduce the bandwidth…
Part Number: ONET8551T Hi dear supporting team,
for ONET8551T, the d/s mentioned its sensitivity is -20dBm, while in the test report, it shows 20uVpp input current test result, which in calculation is lower than -20dBm, right? tks!
Thanks for your support about ONET8551T, I still want you to share the HTOL report; what should I provide to you ?
The customer had NDA with TI; I have sent email to you ，“firstname.lastname@example.org” is right？my email is cris.qi@wpi-group…