Tool/software:
Hi,
Due to a BOM limitation it would be nice if we could use 1uF caps for the bootstrap on TAS5825M, e.g. TDK C1608X6S1H105K080AC.
Will this be OK for the device or will the extra capacitance overload the internal diode?
Would we need to do other changes, like increasing GVDD decoupling to accommodate using 1uF caps for the bootstraps?
Best regards,
Kristian Bergh
