I have the following questions with regards to the DDR3 interface on C6678. The goal is to get the interface to work at 1600MT/s using 4 x16 memory devices in parallel. This may not be possible because of the issues listed below which I hope you can help clarify. 1) Advisory 9 in the Errata indicates that DDR3 memory has a problem with read leveling. Workaround 2 is not an option because I am using fly-by termination and can not get the maximum skew under 1". So the best is 800MT/s with this topology. Workaround 1 is the only option to use auto balancing. The question is that what is meant with "derate for long term use". In my case the memory devices are not on a module but directly on the board and I expect that there may be some gain in doing that. What factors will prevent it from working long term?
2) The DDR3 Design Requirements document (sprabi1a) does not show how to place the memory devices with respect to DSP and what the various trace impedances should be. Given that there are already problems with this interface is it possible to get this info from TI when using 4 x 16 memory devices in a 64-bit bus concept. It only mention loosely in the document that trace impedance is in general 50 ohm on a PCB. For the DM8148 this info is available in far more detail which is very helpful.
3) Do you have any time line on when TI plan to have a fix for the memory interface and if this interface will run at 1600MT/s when using 4 x 16 memory devices on the board?