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SN65C1167: SN65C1167NSR being replaced with SN65C1167ENSR

Kannan Sockalingam
Intellectual 1905 points
Part Number: SN65C1167


Hi team, what are the differences (comprehensive list) when replacing SN65C1167NSR with SN65C1167ENSR. This was suggested in a recent PCN.

  • 0
    Guru 317750 points

    The only difference is that the E device has better ESD protection.

  • +1
    TI__Guru 52612 points

    Hi Kannan,

    The main difference is that the SN65C1167E has improved ESD performance - the "E" version has specs for CDM, HBM, IEC 61000-4-2 (air gap and contact) - this information isn't provided with the non "E" version. 

    Besides that there are a few other marginal differences - that really shouldn't impact most applications - but edge cases could exist. They are shown below:

    1. D, DE, and /RE on the "E" version of the device do not have an ESD diode from input to VCC so the abs max rating is 7V instead of VCC + 0.5V - there is still an ESD diode to ground. That means there is no positive clamping voltage on the single ended logic inputs.  So there shouldn't be any app difference as the current device used has a stricter limit than the "E" version does. 

    2. The typical output differential magnitude and VOH of the Y/Z pins  are going to be slightly better - VOH is typically 3.5V on "E" version compared to 3.4V on non "E" version. and the VOD (across 100 Ohms) is going to typically be 3.7V to 3.1V - so this should only really be a benefit to the system and not an hindrance. 

    3. The typical and max driver propagation delay is slightly slower on the "E" version. It has a typical of 8ns and max of 16ns compared to 7ns and max of 12ns compared to non-E - however for the data-rate this device is supposed to operate at this difference shouldn't impact most applications - but it is a slight difference.

    4.  The typical driver pulse skew is going to be a little larger on the "E" version which is typically 1.5ns compared to 0.5ns on non-E but they are both rated to a max of 4ns. 

    5. The max driver fall/rise time is a bit quicker on the "E" version - its 8ns compared to 10ns on the non-E version - but both devices typically will be around 5ns - so it really shouldn't be that impactful to most applications. 

    6. The Receiver on the "E" version has a slightly faster typical  enable/disable times. The "E" version can enable the receiver typically in 7ns compared to 13ns and the "E" version can disable the receiver in typically 12ns compared to 13ns for the non-"E" version.  Usually this won't impact the application.

    Ultimately the changes are not large - they most marginal. Except the addition of more ESD protections on the "E" device. 

    Please let me know if you have any other questions!

    Best,

    Parker Dodson