We have an existing design that has been used for 20 years and is being updated with parts that are specified from the vendor to operate from -55 °C to +125 °C. We would like to replace the parts with the exact same footprint if possible. If not the same footprint, then something smaller. And as a last resort something larger.
The SN74AHC1G09 is an open-drain output. I am thinking of replacing a 74LS09D (which is an open-collector output, SOIC, 0 °C to +70 °C) with the SN74AHC1G09. One of the key parameters that I need to know is the output capacitance, Coss, of the FET. Currently we have the output of the gate pulled up with a 1k ohm resistor and it operates at a minimum high pulse width of 35 ns. The rise-time needs to be as fast as possible and as such the output capacitance of the open-drain FET will affect the rise-time. I've simulated my circuit with a FET from Infineon, BSS123N, which appears to be an acceptable type of FET. The BSS123N has a typical output capacitance of 3.4 pF so I would be looking for something around this value, obviously the smaller the better.
If I feel that the SN74AHC1G09 will not work acceptably in our existing design I may have to use the SN54LS09FK (20 pin LCCC) which is phyically larger than the I would like.
Thanks for your help.