• State Resolved
  • Locked Locked
  • Replies 2 replies
  • Subscribers 82 subscribers
  • Views 562 views
  • Users 0 members are here
Support feedback
Options
Options
Related

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

TMS320F280025: Write/Erase cycles for sector and entire Flash

Will Gao
Intellectual 2335 points

Part Number: TMS320F280025

Hi experts, 

As shown in datasheet, the max write/erase cycles of sector and entire Flash are different. For F28002x, Write/Erase cycles per sector is 20000, however the number of entire Flash is 100000. Why?

Meanwhile, the data retention duration given in datasheet is the para under junction temp of 85 degree. Do we have the para under the max junction temp. 

Thanks for your help. 

BR, 

Will

  • +1
    TI__Genius 15385 points

    Hi Will,

    Flash write/erase operation requires HV which is provided by Flash Charge Pump. HV stress on Flash pump can only be supported upto 100K write/erase cycles, hence the entire Flash write/erase limit is 100K.

    Sector write/erase is limited by bit cell charge tunneling, which is only qualified upto 20K cycles. Hence Sector limit is 20K.

    For Tj upto 125C, data retention limit will be 10 years but please refer this report also which provides detail on how to calculate "Lifetimes of Embedded Processors".

    Best Regards,

    Nirav

  • 0 in reply to Nirav Ginwala
    TI__Intellectual 2335 points

    Hi Nirav, 

    Very appreciate for your guidance. 

    BR, 

    Will