TMS320F28388D: EMIF SDRAM timing diagram differences between read and write operations?

Hello,

In the datasheet for F28388D, it looks like the figures (figures 12-6 and 12-7) for an SDRAM read operation and an SDRAM write operation are almost exactly the same besides one being labeled read and the other write? The timing diagram aside from the labeling looks identical, is that correct?

It seems that according to table 12-6 the nWE signal should be high for a read and low for a write if I'm interpreting this correctly. 

Should the timing diagram figures or the truth table be understood as correct here?

Munan