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FLASH erase time Piccolo B

Hi all,

In the datasheet, you define a typical flash erase time of 2s / sector. Is there a min/max rating too?? I recognized there are quite big differences from chip to chip. Why? This behaviour could end up in troubles when updating the chips in the field. Obviously this is not only an issue with piccolo devices - see this unanswered post

BR Andreas

  • Hi,

    I do not know exactly what's happening inside the uC during erasing the flash (You will have to ask a TI chip designer). But I think, erasing the floating gate transistors of the flash gets harder the older your flash gets (or the more program/erase cycles you have done). So the erase cycle will last longer (I could observe this at F2810s, because they just had 100 guaranteed flash cycles and I achieved to program my development uC to death).

    But I cannot say what the maximum erase time is (which should/must be written in the datasheet!). Perhaps some TI engineers can.

    Best regards,
    Edwin Krasser

  • Hi Edwin,

    Thanks for your feedback, personally I think you are on the right track, however I am still waiting for a reply from TI. I think the datasheet is not complete in this area...

    BR Andreas

  • Hi all,

    OK I have an answer from another TI channel that I like to share. TI does not specifiy min / max times as these times are temperature depending and can be arbitrary long. TI recommends not to use any timeout during flash processes, but to use FLASH-API timeout. Not quite the answer I wished for but at least an answer.

    BR Andreas

  • Apologies for the bump, but I would be interested in having more information on this too. It would be nice to have an insight into the physical cause of variance in erase time between devices. While I understand that flash degrades with use, I find it hard to see how we are seeing 30% differences in erase times between seemingly identical brand new 28023's.