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CCS/LAUNCHXL-F28069M: Some hardware questions about InstaSPIN-FOC application

ming chen3
Intellectual 775 points
Part Number: LAUNCHXL-F28069M
Other Parts Discussed in Thread: DRV8305, CSD18540Q5B, TMS320F28069M, BOOSTXL-DRV8305EVM, DRV8301, DRV8323

Tool/software: Code Composer Studio

1.We have designed a  sensorless motor driver with TI-InstaSPIN-FOC.and I refered to the Launchpad-28069M and the Boostpack-DRV8305EVM.

MCU:TMS320F28069M   Gate driver: DRV8305          MOSFET: TI's CSD18540Q5B.

Now I need to  design a new hardware revision for bigger current.

I Want to use other high  current Power MOSFET. Can you provide TI related references or application notes on the matching design of the DRV8305 and other MOSFETs?

Or reference documentation for IDRIVE applications on the DRV8305 to match the DRV8305 and other MOSFETs

because I do not know whether the drv8305 driver current match the new MOSFET.


2.In BoostXL-DRV8305EVM ,DRV8305 and CSD18540Q5B did not have a drive resistance, do not need a drive resistance? Why DRV8301 reference design has 10 ohm drive resistance?

do you have the refered theoretical and calculation guidance note about the  drive resistance?

3. BoostXL-DRV 8305EVM are used DRV8305 and MOSFET and shunt resistor on the same drive board.


We are going to put the 28069M and DRV8305 on the same control board. In this way, the current and voltage sample  signals and the MOSFET driving signal need to be connected with the driving board through the pins just like the  Launchpad-28069M and the Boostpack-DRV8305EVM .
I am  concerned about the current sampling signal over the pin into the 8305's op-amp, It will result in the current signal detection  error?
This layout scheme is feasible? What needs attention in the layout?

4. Regarding MOSFET parallel scheme, whether TI has the  reference document to learn. Guide the IDRIVE drive current and MOSFET parallel layout design.

5.DRV8305 and DRV8323 (support for high voltage)have the same  SPI protocol . software is compatible?


Thanks ~

Hope to get the reply of TI engineer ~

  • 0
    Intellectual 775 points
    Please give me a hand .
    Thanks~
  • 0 in reply to ming chen3
    Intellectual 385 points
    Hi according to mosfets: please read about the topic "switching losses" (google it) there you can see the influence of the drive current. Turn on and turn off delay are also topics you should read about. In my understanding the gate resistor is only for current limiting (at t=0s VRes=10V, when gate charges the VRes goes to zero).
    At the end you have to find mosfets that are switching fast enough and have a low RDSon. (also look at the topic "dead cycle delay on ePWM")
    The Opamp for current sense should be placed near to the shunt resistor (please anybody correct me if i am wrong). The voltage measured on the shunt resistor is in mV range. I think short lines should be used here to prevent any influence from the environment.
  • 0 in reply to Sebo
    TI__Guru** 115650 points
    1. As below link, you can select a right MOSFET for your application based on the voltage, current and power consumption.
    www.ti.com/.../products.html
    2/3/4. The drive resistor is a option for DRV8305, you can add a 2~10(OHM) resistor for DRV8305 or not.
    5. For the DRV8323, you can refer to below post.
    e2e.ti.com/.../635499