This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

TIDM-BUCKBOOST-BIDIR: How to get these parameters mentioned in the doc?

Part Number: TIDM-BUCKBOOST-BIDIR
Other Parts Discussed in Thread: CONTROLSUITE

Dear Champs,

Would you please help explain how these parameters are derived or calculated?

We wonder if and how these are modified based on our conditions.

1) Gain of Vout_Ref and output voltage?

2) In this design, you mentioned you followed this paper "High Efficiency Wide Load Range Buck/Boost/Bridge Photovoltaic Microconverter".

It says,

"PWM constraints are imposed by minimum switch ONtimes of 100 nsec (S2 and S4) and 133 nsec (S1 and S3) and a dead time of 150 nsec at all switch transitions. Consequently, the buck duty cycle, Dbu (the fraction of S1 ON-time) cannot have a value between 0.9 and 1.0. Likewise, the boost duty cycle, Dbo (the fraction of S3 ON-time) cannot exist between 0 and 0.033. The PWM method described below provides a smooth transition between the buck and boost modes as load current increases while adhering to all switching constraints. The ideal dc gain of the converter is given by...

Buck mode switching, where Dbo = 0, is used for 0<G≤0.9, where the minimum S2 ON-time is required. Likewise, boost mode switching, where Dbu = 1, is used for G>1.034. The duty cycle resolution is 0.00375% (150 psec steps). To obtain similar resolution in the buck-to-boost transition range, 0.9 < G < 1.034, bridge switching is employed. The bridge mode is divided into two regions, br_A and br_B, as shown in Fig. 4, where Dbu and Dbo are plotted as a function of converter gain. At the low-gain end of br_A, S3 is switched on for its minimum allowable time, 133 nsec, corresponding to Dbo = 0.033. At the same time, Dbu = 0.875, which results in a gain of 0.9052. To increase the gain within the br_A region, Dbu is increased up to a maximum of 0.9 (again limited by S2 minimum ON-time),
corresponding to a converter gain of 0.9310. In the br_B region, Dbo is varied while holding Dbu = 0.9. The high-gain end of br_B, 1.033, is reached when a smooth transition to boost mode can be made employing the minimum S3 ONtime. It is worth noting that, given the minimum and dead time switching constraints, this strategy achieves the minimum possible average inductor current at all values of gain and therefore minimizes the conductive losses in the inductor and the switches."

Q: How do you get the minimum switch ONtimes of "100 nsec" (S2 and S4) and "133 nsec" (S1 and S3) and a dead time of "150 nsec" at all switch transitions?

How to derive these 100 ns, 133 ns, 150 ns?

Q: Why is this "Dbu (the fraction of S1 ON-time) cannot have a value between 0.9 and 1.0"?

Q: Why is this "Dbo (the fraction of S3 ON-time) cannot exist between 0 and 0.033"?

Q: How to get 0.9052? (At the same time, Dbu = 0.875, which results in a gain of 0.9052)

Q: How to get 0.9310? (To increase the gain within the br_A region, Dbu is increased up to a maximum of 0.9 (again limited by S2 minimum ON-time), corresponding to a converter gain of 0.9310)

Wayne Huang

  • Wayne,

    1. Gain of Vout_Ref and output voltage?

    I am not sure what the question is here, for the different region transitions we used the Gain_Worksheet (C:\ti\controlSUITE\development_kits\TIDM_BUCKBOOST_BIDIR\v1_00_00_00\~Docs) under open loop to get a fairly smooth transition. As the smoothness of transition depends on FETs selected, this is an emperical step, or atleast that is what we performed for calulcating these parameters.

    The rest of your questions are specific to the paper, we referrred the paper but I did not analyze each and every line that it describes. These will be good questions for the author of that paper, and you can reach out to them for the explaination for the specific numbers. I did not use these numbers, the way i selected the number was emperically through the gain worksheet.