Hello,
I am checking this reference design of TIDM-SOLARUINV and trying to simulate a design for specification changes.
In this design, I am taking two considerations. The first one is using MOSFET,transformer, clamp capacitor all from TI reference design, I am using Totem pole instead of using the gate driver IC as it's simulation model is not available.
The second point I have simulated open-loop control of MOSFET in a flyback converter
I have also implemented a thermal analysis model for the MOSFET's to get idea of junction temperature.
But I am checking that I get an efficiency of nearly 60% and the junction temperature is above 50 C than junction temperature.
For these two problems how can I improve the design so we can achieve efficiency between 95% to 99% and decreasing junction temperature?
Kindly advise me on improving system efficiency.
Regards
Pulkit Prajapati