Hello:
At present，the main technical parameters of the brushless DC motor used in our skylight are as follows:
Number of magnetic poles of motor: 8 poles
Normal operating voltage range: 9 ~ 16V;
Normal operating temperature range: - 40 ℃ ~ 90 ℃;
At 23 ℃ room temperature and 13V nominal voltage, the locked rotor current is 15a and the maximum working current is 6A;
At 23 ℃ room temperature and 16V voltage, the locked rotor current is 18.5a;
At -40 ℃ low temperature and 16V voltage, The locked rotor current is 24a ;
At -40 ℃ room temperature and 13V nominal voltage, The maximum working current is 8A;
During the model selection device of sunroof control module of one to one MOS scheme,The basic information about the drive chip and MOS tube of competitive products used in the market is as follows: :
1. Main parameters of MOS driver chip used by competitive product control module:
Number of Actuators & output terminals: 2 drivers & 2 output;
Input power supply voltage VS range: 5.5V to 40V;
Input power supply voltage VCC range: 3.0V to 5.5V;
Working power supply current & standby current: 6.4 MA (max) & 10uA (max);
Output voltage range: - 4 V to 40 V;
Output current gate driver current: 31ma (max);
Drain source on resistance RDS_ on_ gate：20 Ohms(Max)@25℃；
SPI clock：7MHz (Max) 16bit；
Charge Pump Operating Frequency：667KHz(Max)；
Operating temperature range: - 40 ℃ to 125 ℃
Supplement: independent control of low side and high side n-MOSFETs
2. Main parameters of single cell MOS transistor used by competitive product control module:
Transistor polarity & channel mode: n-channel & enhancement;
VDS drain source breakdown voltage: 40V;
ID continuous drain current: 71 A@25 ℃, 50A@100 ℃;
RDS on drain source on resistance: 5.3 MOhms (max) @ 10V;
VGS - grid source voltage: ± 20 V;
VGS th gate source threshold voltage: 2.5 V (min);
QG gate charge: 16 NC;
PD power dissipation: 50 W@25 ℃, 25W@100 ℃;
Descent time: 8 ns;
Rise time: 72 ns;
Forward diode voltage drop: 1.2V (max);
Operating temperature range: - 55 ℃ to 175 ℃;
3. Main parameters of dual cell MOS transistor used by competitive product control module:
Transistor polarity & channel mode: n-channel & enhancement;
VDS drain source breakdown voltage: 40V;
ID continuous drain current: 40 A@25 ℃, 40A@100 ℃;
RDS on drain source on resistance: 6 MOhms (max) @ 10V;
VGS - grid source voltage: ± 20 V;
VGS th gate source threshold voltage: 1.5 V (min);
QG gate charge: 17 NC;
PD power dissipation: 71 W@25 ℃;
Descent time: 10 ns;
Rise time: 4.3 ns;
Forward diode voltage drop: 1.3V (max);
Operating temperature range: - 55 ℃ to 175 ℃;
The above are the main technical parameters provided for the device selection. We also hope that your company can provide a reference for the device selection of competitive drive chips and MOS tubes. Thank you.
