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DRV8305: Use with IPTG014N10NM5

Part Number: DRV8305

Goodmornig.

I would like to know what capacitor I shall use as charge pump (bootstrap) if I need to drive a bridge of six IPTG014N10NM5. On your datasheet use a 47nF. Is it sufficient ? Can I increase it ?

I need to drive 107A with the bridge; this is the reason of the choice of the MOS IPTG014N10NM5.

Waiting for a your kind answer, I thank you.

Best regards.

Christian Bacchetta

  • Hi Christian,

    No, you cannot increase the value. You should use a 47nF capacitor for CP1H-CP1L and CP2H-CP2L and proper operation of the tripler charge pump. Higher values can affect the operation. 

    Thanks,
    Aaron

  • Hello Aaron.

    Thank you for your reply. I have a question.

    The MOSes I selected has 12nF of input capacity ech one; does the driver pilot them with the value of 47nF of the charge pump ?

    Thanks.

    Christian Bacchetta

  • Hi Christian, 

    The 47nF cap is the charge pump flying capacitor, this value is used for the charge pump controller integrated into the DRV8305 to generate VCPH voltage. 

    I believe what you're thinking of is the VCPH-PVDD storage cap value. This cap stores the VCP voltage which is used to pilot the high-side gate drive voltage (GH_x). This will be affected by the FET's input gate charge, which is the following equation:

    Therefore, you may increase the value of VCPH-PVDD capacitor, but not the CP1H-CP1L or CP2H-CP2L capacitor. 

    Thanks,
    Aaron