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MOSFET

Aniket Mali
Prodigy 10 points

How to calculate MOSFET Gate Diver resistance?

What is the formula & considering parameters?

  • 0
    TI__Mastermind 38040 points

    Hello Aniket,

    Thanks for the inquiry. When driving a power MOSFET, the gate resistance is made up of 3 main components: gate driver resistance, FET internal gate resistance and external gate resistor. The gate driver and internal gate resistance are typically specified in the driver IC and FET datasheets, respectively. If required, the external gate resistor usually ranges from a few ohms up to tens of ohms. The gate resistor slows down FET turn-on & turn-off and can be used to mitigate switching spikes/EMI. However, this increases switching losses and using the minimum gate resistance is recommended. In most cases, the gate resistor is determined empirically thru bench testing. When paralleling FETs, each device should have its own gate resistor. Let me know if I can be of further assistance.

    Best Regards,

    John Wallace

    TI FET Applications