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DRV8350F: Drive CSD19532Q5B

Cherry Zhou
Mastermind 22235 points
Part Number: DRV8350F
Other Parts Discussed in Thread: CSD19532Q5B,

Hi team,

Here's an issue from the customer may need your help:

Does the DRV8350FH gate driver require an additional capacitor between GS of the MOSFETs when driving the three-phase H-bridge formed by the CSD19532Q5B? Since some TI designs have a 2200pF capacitor added and some do not. Why is this difference?

The customer wants to make a three-phase motor drive with a PWM frequency of around 70kHz to 20kHz. Is this GS capacitance required OR not?

Could you help check this case? Thanks.

Best Regards,

Cherry

  • 0
    TI__Mastermind 24860 points

    Hi Cherry,

    An additional capacitor between the gate and source of a MOSFET may help improve performance for certain systems but it is not required to operate the DRV8350F.  

    Adding additional capacitance between the gate and source of a MOSFET will slow the switching rate of the MOSFET, reduce ringing by increasing the required gate charge, and help to decrease parasitic capacitance from being able to turn on the MOSFET.

    Best Regards,

    Joshua