Hi team,
May I know under what conditions are the above leakage currents measured? Thanks.
Best Regards,
Cherry
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Hi team,
May I know under what conditions are the above leakage currents measured? Thanks.
Best Regards,
Cherry
Hi Cherry,
Some of the test conditions are listed in the datasheet.
However I have reached out to the systems team to gather any additional information on the testing conditions.
I will reach out when I know more.
Best,
David
Hi Cherry,
The systems team has confirmed that they are unsure of any additional testing conditions, other than the ones listed on the datasheet.
Was there a particular condition or specification you were looking for?
Best,
David
Hi David,
Thank you for the confirmation.
Is this current measured with the upper and lower power pipes all off?
Thanks and regards,
Cherry
Hi Cherry,
Yes, the leakage current is measured with the MOSFETs in the Hi-Z state. While in this state the drain of the MOSFET is supplied with 5 V and the current flowing into the pin is then measured.
Best,
David
Hi David,
The customer's understanding is that in the Hi_Z state, any voltage within the drain connection range of the MOSFET, the leakage current is within 200nA. correct? For example, connect any voltage between 0 and 5V
Regards,
Annie
Hi Annie,
Yes, as long as the MOSFET is in the Hi-Z state, any voltage within range will allow the corresponding leakage current to be measured up to +-200 nA.
The drain and source voltage should be the same, essentially "shorting" the drain and source. The maximum leakage current of 200 nA can be measured by applying the maximum allowable voltage to the drain and source, VM = 5 V.
Best,
David