Hello TI experts.
I'm looking at the documentation of the overcurrent protection and I can see there are two protections. One that senses overcurrent in the fets and another in the shunts.
The VDS_OCP says:
"all external MOSFETs are disabled and the nFAULT pin is driven low.
When the external MOSFETs are disabled in this way, the driver automatically uses a lower setting for the gate
drive current instead of the programmed IDRIVE setting. This setting lets any large current that may be present
to be switched off slowly to minimize any inductive kickback caused by parasitic capacitance in the system"
While the SEN_OCP says:
"all the external MOSFETs are disabled and the nFAULT pin is driven low"
So my question is if the SEN_OCP also lowers the IDRIVE setting to help slowly switch off the fets in the system.
Why would you use one or another?
Thank you very much!