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DRV8718-Q1: comparison to TLE92108

Daniel Wang (auto)
Expert 3550 points
Part Number: DRV8718-Q1

Hello experts,

Have a nice day.

Do you have some comparison materials between DRV8718-Q1 and TLE92108, it will be helpful for customer evaluate our device.

Besides, I have a question: DRV8718-Q1 support POB while the device is in its low-power sleep mode, but there are some scenarios that B EMF voltage may up to dangerous range when device in active mode, so why not set POB function in active mode as well.

Thanks!

Best regards.

  • 0
    TI__Mastermind 23431 points

    Hey Daniel,

    Are there any particular specs you'd like compared between these devices?  We don't have any comparison materials already made, but the DRV8718 is a good replacement for TLE92108.  Both are gate drivers with half-bridge control with many similar features and specs.  Our driver supports up to 100kHz (though system parameters and MOSFET characteristics may limit this to a lower value).  

    Daniel Wang (auto) said:
    Besides, I have a question: DRV8718-Q1 support POB while the device is in its low-power sleep mode, but there are some scenarios that B EMF voltage may up to dangerous range when device in active mode, so why not set POB function in active mode as well.

    I'm not sure I understand the question - during normal control you can set the FETs to be the same state as they are in Powered Off Braking (POB).  The advantage of POB is to be able to have that state with the device in low-power sleep mode.  If the device is on, it isn't powered off braking, it's just braking/stopping.

    Regards,

    Jacob

  • 0 in reply to Jacob Thompson
    TI__Expert 3550 points

    Hi Jacob,

    Thanks for your reply.

    Yes, when the device work in the active mode, we can realize braking by MCU setting FET, but the POB Internal overvoltage monitor (option 1) will be missed, customer need extra voltage comparator to realize the function. How do you think of it?

    Best regards.

  • +1 in reply to Daniel Wang (auto)
    TI__Mastermind 23431 points

    Hey Daniel,

    I checked with a coworker more experienced with this device:

    POB is only for sleep state( nSLEEP=Low). PVDD is vaild while active mode.

    During active mode, you can enable low side FET ON through MCU’s command. Then PVDD pump up could be avoided.

    Regards,

    Jacob

  • 0 in reply to Jacob Thompson
    TI__Expert 3550 points

    Hello Jacob,

    Thanks for your support.

    Best regards.