Hi,Ti member
when using DRV8353 to drive MOS ,found the rise time of high side MOS is different from the low side MOS ,
I had set the same IDRIVEP and IDRIVEN of High side MOS and Low side MOS ;
---Low side MOS-VGS waveform:
--High side MOS VGS waveform
as you can see , VGS voltage rises from zero to Miller platform voltage,which is different
pls help me
in detail ,pls check the attachment