Original question:
Hello, team
I would like to know IDRIVE by temperature.
Could you share the DRV8343 Q1 version of the below Figure 7-8.data?
DRV871x-Q1
www.ti.com/.../drv8714-q1.pdf
Figure 7-8. High-Side Gate Driver Source Current
If possible, please also tell me the value of each plot with VM=13 V.
best regards
manabu
Hi Manabu,
Thank you for your patience in this delayed response.
For the IDRIVE characterization, the most important correlation will be related to temperature:
Higher temperatures (125C) will lead to lower IDRIVE values, while lower temperatures will lead to increased IDRIVE values. This behavior is due internally to the Smart Gate Drive architecture of the device, where MOSFETs control the current channels (as explained in the documentation here) and the respective RDSon is influenced by temperature.
For the DRV8343-Q1, the best way to characterize the IDRIVE in your specific system is to observe the device IDRIVE in the worst case temperature (hottest or coldest) and in the standard use case (normal temp) and from there decide which IDRIVE setting provides the minimum desired MOSFET switching speed for your application in such cases.
The maximum and minimum values observed should not exceed the limits defined in the datasheet, and while the range is large, in practice the system characterization allows for much more specific evaluation and control.
I hope this information is helpful, and once again apologize for the delay.
Best Regards,
-Joshua
