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TPS63710: Using a DC-DC Converter to Reduce Miller Effect & Cross-Conduction in a MOSFET Half-Bridge

Part Number: TPS63710

Tool/software:

Hi !

I'm Matis,

An apprentice Engineer, currently working on the design of a power electronics board.

  • Context :

We're using a 6-layer PCB, with just over a dozen of the MOSFETs IAUT300N10S5N015ATMA1 from Infineon technologies. The circuit is controlled by a gate driver 2ED21084S06JXUMA1 and operate with a 12V input voltage. These components will generate heat. In normal operation, the board should be able to deliver 120 A continuously. Currently, it delivers only 90 A.

  • Problems :

We've noticed that when testing our prototypes, some pairs of MOSFETs in series (in a half bridge configuration) are short-circuited between VBUS and GND (see schematic screenshot), as both MOSFET gates are open at the same time. This Miller Effect could cause cross conduction and could be a reason why our board heats up excessively and doesn't reach the desired voltage.

Our constraints are as follows:

- We have no space on the PCB for a heat sink.

- We can't increase the width of the layers.

- We can't modify the dimensions or shape of the PCB.

- There is no time or space left to route the Mosfets in a different way.

There will still be an aluminum plate under the PCB to absorb heat. We've optimized the heat release as much as possible.

  • TPS63710 :

We think that the most appropriate solution is to add a component like the TPS63710  that allows the mosfets to be negatively polarized, to see if this allows us to eliminate the possible cross-conduction and the problems associated with it.

  • Question 1 :

We'd like to know if this idea seems viable to you, if you're familiar with this type of solution and what recommendations you could make to design/route the circuit ?

  • Question 2 :

- I have found in many similar online circuits that the addition of Cgd, Cgs and Cds capacitors can greatly improve the stability of this type of MOSFET half-bridge circuit, by mitigating fast switching effects such as the Miller effect and voltage transients. In my case, this could be relevant.

- I've also noticed that using an RLC circuit at the output of a MOSFET half-bridge is an effective technique for handling fast switching problems.

Are these methods useful? or even compatible with the addition of TPS63710?

Thank you in advance for your help !

Arm 1 3D exemple :

Miller effect :

blue is the voltage sent to the motor, red the high-side switching, green the low-side switching and purple the current drawn by the board. The miller effect can be seen on the falling edge of the low side.

Arm 1 schematic :

  • Hi Mati,

    I suggest you can rotate the diodeD2 and D4) in driver circuit like below. This can reduce the driver resistor on the falling edge of the low side, thus making miller plateau shorter.

    Thanks

    Colin

  • Hi Colin !

    In theory, if I refer to what is written in the Infineon datasheet "Designing with power MOSFETs". In this configuration, the diode slows down the rise time (switch-on) of the gate voltage, while at the same time allowing a fast gate discharge on switch-off. This should already reduce the chances of cross-conduction with a fast switch-off, given that the switch-on is slowed down by default. I suppose, but I'm not sure, the Miller Effect should be caused by faster transitions?


    From what I understand, in such cases, we leave the diode orientation with the cathode towards the gate input and add RC snubbers or RLC.

  • HI Matis,

    Because  miller effect can be seen on the falling edge of the low side in your waveforms, it is necessary to faster switch off speed like below shown. This can shorten miller plateau.

    Thanks

    Colin

  • Hi Colin,

    I didn't make the connection the first time.

    I understand now, it's very clear. I'll make the modification and test my prototype to see how it goes. 

    Thank you very much Slight smile !