This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

DRV8353: DRV8353 and PWM tables

Part Number: DRV8353
Other Parts Discussed in Thread: UCC3626

Tool/software:

The datasheets for all versions clearly define operational modes in a set of tables.

Table 1 describes a simple gate driver mode, where the INHx and INLx signals determine the gate outputs and motor winding voltages. When both INHx and INLx are low (or both are high), GLx and GHx are low and SHx are HiZ.

Question: In this condition, does this mean the gate-to-source voltages for both the high-side and low-side MOSFETs are low, ensuring both MOSFETs are turned off? If both are off, is this why the motor winding connection (SHx) is indicated to be in a high-impedance (Hi-Z) state?

Additionally, while SHx is in a Hi-Z state, it is still connected to the SHx pins of the 8353. Given that GLx and GHx are both low, and SHx is in Hi-Z, how is it guaranteed that the high-side and low-side MOSFETs remain off for extended durations under these conditions?

Also second Q:

I see that in this mode where Synchronous mode, based on hall conditions, the motor winding that connects to high side of the 3 phase bridge is pwm using both top and bottom fets.. I assume this turns of top then bottom but never together. What is the purpose of this mode? What might be the motor voltages be like. And what applications this is used.

 Finally, If I select Table 5. what is the conditions of SHx signals since unlike previous tables it is not defined. What modes table 5 is used? If i hold INHx INLx both low or high indefinitely, will both high and low fets be Off by gate to source voltage both low? and what is the SHx pin of the 8353?

  • Hi Turguy, 

    Question: In this condition, does this mean the gate-to-source voltages for both the high-side and low-side MOSFETs are low, ensuring both MOSFETs are turned off? If both are off, is this why the motor winding connection (SHx) is indicated to be in a high-impedance (Hi-Z) state?

    This is correct - when INHX and INLX are both low then the MOSFETs have no significant gate signal (gate is neither pulled high or pulled to GND) and the outputs/SHx are essentially floating at high impedance. 

    Additionally, while SHx is in a Hi-Z state, it is still connected to the SHx pins of the 8353. Given that GLx and GHx are both low, and SHx is in Hi-Z, how is it guaranteed that the high-side and low-side MOSFETs remain off for extended durations under these conditions?

    The DRV835x family incorporates internal 150kOhm pull-down resistors (Roff) on the GHx-SHx and GLx-SLx pins to help prevent accidental turn on in these cases. 

    I see that in this mode where Synchronous mode, based on hall conditions, the motor winding that connects to high side of the 3 phase bridge is pwm using both top and bottom fets.. I assume this turns of top then bottom but never together. What is the purpose of this mode? What might be the motor voltages be like. And what applications this is used

    This synchronous PWMing vs the asynchronous control is only significantly different when comes to power losses and efficiency (low side FET body diode conduction). Please see this E2E thread for more detailed explanation: https://e2e.ti.com/support/motor-drivers-group/motor-drivers/f/motor-drivers-forum/728003/drv8323-1x-pwm-mode-synchrounous-rectification-vs-asynchronous-rectification

    Finally, If I select Table 5. what is the conditions of SHx signals since unlike previous tables it is not defined. What modes table 5 is used? If i hold INHx INLx both low or high indefinitely, will both high and low fets be Off by gate to source voltage both low? and what is the SHx pin of the 8353?

    For independent mode you have direct control over the MOSFET gate states -- SHx will be the appropriate output states based on which FETs are conducting. For example,  if INHX = HIGH and INLX = LOW, then the high-side FET will be opened to VDRAIN allowing SHx to be at VDRAIN potential.  

    However,  setting INHx AND INLX = HIGH can result in shoot-through/overcurrent,  as the path from VDRAIN to SHx and the path from SHx to GND are both open.

    I hope this information has been helpful.  

    Best Regards,

    -Joshua

  • Thankyou Joshua. 

    I am a bit puzzled here Josh. You said:

    This is correct - when INHX and INLX are both low then the MOSFETs have no significant gate signal (gate is neither pulled high or pulled to GND) and the outputs/SHx are essentially floating at high impedance. "

    Based on this I understand that GLx and GHx signals are noted as "L" in table 1 when inputs are both L or both H, inputs being INLx and INHx; this condition per your explanation L means neither high or true low. 

    Yet when same inputs are Low/High or High /Low then GLx and GLHx are either High which means drive gate gigh and turn on FET or Low (same L symbol as above) but this time actual turn off the FETs.

    I am quite puzzled between the 2 conditions of L as shown in table.

    When Halls based PWM commutation transitions from High to Low which will be connected to the INHx and INLx signals of 8353, we expect fet gates to be kept actively in Off stage by their gates not to be floating. I think I need more information to understand how fets are turned on anbd off with Table 1. 

    below picture is the signals we will be generating from UCC3626 with QUAD =1 case. I like to know what 8353 will provide at GLx and GHx output. 

    High I like FTe to turn on by gate to source high voltage and L I like FET to turn off by its Gate to source voltage low. Can you please explain this if i use Table 1.

    Note I dont want to use table 5 because it does not provide shoot through protection; maybe I am wrong.

  • Hi Joshua

    A different way to ask same question using 8353 Gate Drive Circuit diagram from the specification pdf document:

    Mission is to use Table 1 as shown below to commutate BLDC motor 3 phase FET bridge using Unitrode UCC3626 (now TI) controller as shown above

    --------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

    Below is an excerpt from the 8353 specification, detailing the design and functionality of the gate driver circuitry.

    Question: I’d like clarification on the detailed operation of the gate driver under the conditions described in Table 1:

    • Condition: Both INL and INH are low (L).
      • According to Table 1:
        • The gate-to-source voltage (GH to SH) for the high-side external FET is low, meaning the high-side external FET remains off.
        • And gate-to-source voltage (GL to SL) for the low-side external FET is also low, meaning the low-side external FET remains off.
        • Therefore both external FETs are off, resulting in the motor winding (SHx) being in a high-impedance (Hi-Z) state, which aligns with expectations.
        • Also, High side external fet source and low side external fet drain connection is connected to the 8353 SH pin.

    Follow-up Details:

    • In this state, the Gate driver internal lower FET on the high-side remains on with low impedance. This fet sees a load that includes includes a 150 kΩ internal resistor in parallel with the external high side FET's gate-to-source capacitance (which has no charge under these conditions).
    • A similar situation applies to the low-side gate driver circuitry for the lower external FET.

    Assumption: This condition, where the lower internal FET for the high-side remains on with low impedance, can persist for extended periods indefinitely because both INH and INL inputs to the 8353 are held low. Same can be stated for the lower internal FET for the low-side internal gate droiver droiving low side external FET.

    Question: Is this explanation accurate, particularly regarding the behavior of the internal lower FETs for both low and high side and the long-term stability of this condition if we kept INH and INL both low at the inputs of 8353?

    Note I used only the L and L row but same questions can be composed for other 3 rows of table #1.

  • Hi Turguy,  

    Thank you for your additional comments/clarifications. Please allow me to follow-up later today with a full response. 

    Best Regards,

    -Joshua

  • Hi Turguy,  

    I apologize for the delayed response as my original did not process on the site. 

    Please find my original response below: 

    The Table-1 H and L symbols for the respective pins do represent different states: 

    When INHX and INLX are both low (L), that means that both GHx and GLx are off (L), resulting in the output, SHx, to be at HI-Z since it is not being up to battery or down to ground.  

    When INHx is high (H) and INLx is low (L), the GHx is high (H) and GLx is low (L), resulting in the output SHx being pulled up (H) to the battery voltage.  

    When the reverse happens (GHx = L, GLx = H) then SHx is pulled to ground (L). 

    And lastly when INHx and INLx are both high (H), then the device registers this as going to cause a shoot-through condition and both GHX and GLX are turned off (L), resulting in output SHx being left floating at Hi-Z. 

    I hope this deconstruction of each state helps to answer your above use case questions! The main difference between the input/gate "L" and the output/SHx "L" is that for the inputs/gates it means that they are not on, while for the outputs/SHx it means that it is actively being pulled down to GND. 

    Best Regards,

    -Joshua

  • Thanks Joshua. I understand but I still want to verify that External FETS are not turned off by internal 150K resistors only but with internal chip gate drive fets as shown below in annotated picture. Please see my explanation and tell me if what I draw here is correct or not. If not please make the correction.

  • Hi Turguy, 

    Thank you for your clarification--  

    Actually,  when both inputs are low (INHx = L and INLx = L) then, as you said, SHx = HI-Z.

    However, this does not mean the SHx voltage is 0V but rather a floating voltage. This SHx = HI-Z voltage often floats up to VM due to body diode current flow. Please read this FAQ for a better understanding of this mechanism: https://e2e.ti.com/support/motor-drivers-group/motor-drivers/f/motor-drivers-forum/1241308/faq-why-do-shx-and-ghx-float

    The internal pre-driver FETs are only set to pull-down when the INLx inputs are HIGH, to my understanding.  And the internal pull-down resistors are to keep the gates off (GHx shorted to SHx) when not in use. 

    I hope this answers your above question. 

    Best Regards,

    -Joshua

  • I think Point A in my annotation is HiZ state with both external FETS Off. But lets say top external FET gat to source Capacitor which is crucial to determine external fet On or Off condition is still tied to 8353 SHx pin by a physical trace. If 8353 SHx is also HiZ then external Fet cate to source cap is floating . This may mean only thing keeping this cap from having any charge os 8353 internal R 150K. This sounds very suspicious to me. Why not 8353 internal Fet which i show in my annotation as Top Lower Internal FET is not held on providing low impedance to external FET gat to source Capacitor so this can never charge; this way of impedance is much lower than 150K. I like to know more about this please.

    Also example:

    Assume we have INHx = H and INLx is Low. This means top external fet is on and bottom is Off Point A is at 48 volts. In this condition Top higher internal Fet is in On condition to provide high gate to source voltage like 10 volts.

    Now both inputs go Low and low which can be a real condition. I assume Top Lower Internal Fet actually turning on to physically discharge the External FET gate to source capacitor, not the 150K resistor. Do you now mean that this internal fet actually turns off which is what i am puzzled with.

    I see the role of internal 150K is a protection mode not an active turning of external fets mode; since discharging gate cap with 150K is way too long of an event. 

    Please comment; also maybe we need to set a meeting to talk this since we are going back and forth.  My concwrn is abased on your answers the role of 150K; I think this aa safety just in case role not an actively keep Gate to Source cap low when things are fucntional. I am happy to have a meeting Joshua.

    Regards

    TG

  • Hi Turguy,  

    Thank you for the response here. I think i better understand your question now and will follow-up today with a further response.  If there's still confusion then I would also be happy to have a meeting to discuss this topic at the start of next week since i will be unavailable due to the holidays.  

    Best Regards, 

    -Joshua 

  • Hi Turguy,

    I have been doing further research and think it'd be really helpful for us to review the TDRIVE state diagram to better understand exactly when and which internal FETs are on/off as well have been discussing:

     I_HOLD is the upper-arm  or  lower-arm internal FET weak current, and I_STRONG is the lower-arm internal FET strong current, with values defined in the DRV835x datasheet here:  In the example where both INHx was high and INLx was low, then both INHx=INLx= low, it is most likely that both lower-arm internal FETs are on with a weak discharging current (IHOLD) as you suggested,  shorting GHX/SHx together and GLx/SLx together, which is HI-Z as we have discussed. And the additional pull-down resistors are implemented to bolster and to help keep the FETs off even when the driver is disabled. 

    So I think this should help to clarify and prove your original thinking! 

    Please let me known if you have any additional questions regarding this interpretation-

    Best Regards,

    -Joshua

  • Thank you very much Joshua its very clear and great design as you explained