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DRV8962: Improved Power Dissipation compared to DRV8412?

Thomas Schleicher
Prodigy 10 points
Part Number: DRV8962
Other Parts Discussed in Thread: DRV8412,

Tool/software:

Hello,

is there any information or assumptions regarding the difference in power dissipation between the DRV8412 and the DRV8962. The Rdson of the internal MOSFETs of the DRV8962 are already reduced to half compared to the DRV8412, but is there any indication that the switching losses in the DRV8962 are also lower compared to the DRV8412. Is there an approximate assumption in % by how much the switching losses will be lower?

Thank you in advanced

Best Regards

Thomas

  • 0
    TI__Expert 5340 points

    Hi Thomas, 

    Thank you for your question. 

    The total power dissipation constitutes of three main components - conduction loss (PCOND), switching loss (PSW) and power loss due to quiescent current consumption (PQ).

    Where:

    PCOND = 2 x (IRMS) x (IRMS) x (RDS(ONH) + RDS(ONL))

    PSW_RISE = 0.5 x VVM x IRMS x tRF x fPWM

    PSW_FALL = 0.5 x VVM x IRMS x tRF x fPWM

    PQ = VVM x IVM

    As shown in table below the DRV8962 RDSonh and RDSonl are varied for different junction temperature. Also, it has two rise and fall time mode. So, to compare these devices together, it should be done for specific condition. 

    In the case of switching loss the DRV8962 device has two options 70 ns and 140 ns however, the DRV8412 has lower rise/fall time equal to 14 ns. So, the DRV8412 has lower switching loss compared to the DRV8962. 

    DRV8962 6.5 Electrical Characteristics here

    DRV8412  5.7 Electrical Characteristics here

     

    Best regards, 

    Mojtaba.