Tool/software:
Customer found the dropout voltage on the VCP pin when operation as below CH1 probe.
Condition:
- PWM Freq: 10KHz
- Qg total,max : 1128nC
- Following d/s to put 1uF between VDRAIN and VCP, and 47uF between CPH and CPL
Question:
1. How is the capability of the charge pump? is that able be controlled?
2. If both 1uF or 47uF are increased, is that able to improve the dropout of the VCP? What max. recommended capacitance you suggesting?
3. How much MOSFET's Qg you suggest to drive with DRV8353?