Tool/software:
Hello：
The customer has discovered a DRV8350H and LM5012DDAR burnout accident, and measurements have revealed:
1. No failure was found in MOSFET;
2. CPH and CPL of DRV8350H are short circuited; Even after removing the capacitor, there was a short circuit
3. The output of the U-phase lower bridge GS of DRV8350H is short circuited, and the resistance at both ends of the V-phase upper bridge GS is about 100R;
4. The SW of LM5012DDAR is short circuited to GND.
The relevant schematic and PCB are as follows.
D6_V3_20240118_3.DSNZDL6_POWER V4 20240305_1758.brd
Measure the gate switch waveform of MOSFET as shown in the following figure.
The customer has previously experienced MOS burnout and suspects that it was caused by the failure of the 8350 first. The failure analysis of the MOSFET suggests that the possibility of gate breakdown cannot be ruled out.
Could you please analyze the possible reasons, Thanks！！！
This case is urgent，Please provide timely feedback ASAP
