I have noticed that on my DRV8301 development board (rev.C), the high-side FET Vgs only reaches 8V while the low-side FET Vgs reaches 10V. The datasheet indicates the range should be 9.5-11.5V (for both high- and low-side I would assume), with the GVDD_UV fault occuring when Vgs drops below 8V. Can anyone confirm this on their board?
The exact same thing is also observed on my own project board.
Measurement method for high-side Vgs: oscilloscope ground clip on motor phase out test point, and probe attached to high-side FET gate pin.
Thanks.
Edit:
I have attached a screenshot showing the high-side FET Vgs (blue), and low-side FET Vgs (yellow). For this measurement, I actually used a differential probe for the high-side FET Vgs, with the probes actually attached to the gate and source pins of the FET. Using a standard passive probe to measure just high-side FET Vgs gives the same result.