The datasheet for the DRV8301 states the gate driver "Support up to 200kHz switching frequency with Qg(TOT)=25nC or total 30mA gate drive average current".
In this statement, what is Qg(TOT)?
1. The Qg for a single FET? At 200kHz each highside and lowside FET can have a Qg of 25nC.
2. The sum of the Qg for all highside FETs, but not the lowside FETs? I could have 3 highside FETs, each with a Qg of ~8nC. If I only wanted an H-bridge with 2 highside FETs, each FET could have a Qg of ~12nC.
3. The sum of the Qg of all FETs (highside and lowside)? For a full 3-phase inverter, each FET can only have a Qg or 4nC at 200kHz.
Also, how does the 25nC translate into 30mA?
The formula I would use if 30mA was being shared between all 6 FETs :
6 * f * Cg = 6 * 200kHz * 25nC = 30mA
Is this the correct interpretation of the relationship between 30mA to 25nC?