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DRV8301 Gate driver loading Qg(TOT)

Other Parts Discussed in Thread: DRV8301

The datasheet for the DRV8301 states the gate driver "Support up to 200kHz switching frequency with Qg(TOT)=25nC or total 30mA gate drive average current".

In this statement, what is Qg(TOT)? 

1. The Qg for a single FET?  At 200kHz each highside and lowside FET can have a Qg of 25nC.

2. The sum of the Qg for all highside FETs, but not the lowside FETs?   I could have 3 highside FETs, each with a Qg of ~8nC.  If  I only wanted an H-bridge with 2 highside FETs, each FET could have a Qg of ~12nC.

3. The sum of the Qg of all FETs (highside and lowside)?   For a full 3-phase inverter, each FET can only have a Qg or 4nC at 200kHz.

Also, how does the 25nC translate into 30mA?    

The formula I would use if 30mA was being shared between all 6 FETs :

6 * f * Cg = 6 * 200kHz * 25nC = 30mA

Is this the correct interpretation of the relationship between 30mA to 25nC? 

  • Derek,

    Thanks for you query, Will get back to you once I investigate.

    Best Regards

    Milan -> System App- Motor Application Team

  • Derek,

    The last part of your line of questioning is exactly correct including the formula. 

    Qg(total) is for EACH fet and the specification for this is commonly found in a FET datasheet.  If you back off on the switching frequency, you can drive some very large FETs.  Motor applications are typically at or around 30kHz for Fsw, so I am not sure why we gave the example at 200kHz in the datasheet.