Has anyone tried to switch both the high and low side FETs in the configuration from page 14 of the DRV8301 datasheet?
Did you notice temperature difference? More efficient?
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Has anyone tried to switch both the high and low side FETs in the configuration from page 14 of the DRV8301 datasheet?
Did you notice temperature difference? More efficient?
Hi Jeff,
I believe if the high-side and low-side MOSFETs are equivalent it is generally considered that the loses are equivalent between high-side vs. low-side switching.
Jeff,
Or are asking about whether you should switch the MOSFETs in complementary mode or non-complementary mode?
We also call this asynchronous vs. synchronous switching. The difference is whether the body diode or MOSFET is carrying the current in the "off" period. It is preferred for the MOSFET (synchronous switching) to be utilized since the MOSFET Rds(on) is generally lower than the resistance of the body diode. This will help with thermal performance, efficiency, and current ripple.