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DRV8703-Q1: Review of Protection Functions

Part Number: DRV8703-Q1

Dear, Sir.

The design at my customer side using DRV8703-Q1 is proceeding well.

So they have started the reviewing of protection functiions which DRV8703-Q1 has.

I would like to make sre as followings to make clear answers against them

Please give your advice.

1. GDF.

High-side & Low-side FET Gate deriving voltage are defined on DS.

Are there the voltage threshold on each to judge error or normal after tDRIVE?

2. OTW .

1) I wonder the temperatre measurement on the chip would be just 1 point & it

    used for OTW & TSD?

    If taht true, OTW happened, then TSD happened would be reasonable senario?

2) For clear OTW bit, the writing CLR_FLT bit was needed?

3. TSD.

Is it possible to clarify the max. value of TSD?

Too higher temperature will create other concern such as degradation.

4. SPI I/F Diagnostic.

The customer is considering the method to realize SPI I/F diagnostic on DRV8703-Q1.

1) ADRS 0x02, LOCK bits will be 011 or 110. They considering to write 000 on this

    resister & read out 0x02 to be all 0.

    Is it no problem to write 000 on ADRS 0x02 LOCK bits?

2) Personally, /FAULT pin check => Write 1 to CL_FLT bit => Read ADRS 0x00=all 0,

   This way would be safer to avoid miss-setting of resister. How do you think?

3) Please give your advice if you have better idea.

Best Regards,

H. Sakai

  • Hello Sakai-san,

    My responses are in blue.

    1. GDF.

    Are there the voltage threshold on each to judge error or normal after tDRIVE?

    JL: I do not currently have voltage threshold error data available for the GDF feature. The purpose of the GDF is mainly to detect shorts from GHx or GLx to GND, SHx, or VM. Is the customer concerned by a particular condition that makes them ask for this data?

    2. OTW .

    1) I wonder the temperatre measurement on the chip would be just 1 point & it used for OTW & TSD? If that true, OTW happened, then TSD happened would be reasonable senario?

    JL: TSD occurs at higher temperatures than OTW. OTW only indicates that the device is near TSD. If the device heats further, it will shut down.

    2) For clear OTW bit, the writing CLR_FLT bit was needed?

    JL: The OTW bit should clear when the device temperature reduces.

    3. TSD.

    Is it possible to clarify the max. value of TSD? Too higher temperature will create other concern such as degradation.

    JL: Some of our other gate drive devices specify TSD to 185C. That is my initial guess for an upper limit, but I can investigate further if needed. Since the DRV8703-Q1 is a gate driver, it will likely not have a significant amount of self-heating. This device likely will only experience an overtemperature condition if the ambient temperature or nearby devices exceed 150C.

    4. SPI I/F Diagnostic.

    The customer is considering the method to realize SPI I/F diagnostic on DRV8703-Q1.

    1) ADRS 0x02, LOCK bits will be 011 or 110. They considering to write 000 on this register & read out 0x02 to be all 0. Is it no problem to write 000 on ADRS 0x02 LOCK bits?

    JL: There is no problem writing 000 to the LOCK bits. The register map in the datasheet provides the following description to confirm this: “Writing any sequence other than 110b has no effect when unlocked.”

    2) Personally, /FAULT pin check => Write 1 to CL_FLT bit => Read ADRS 0x00=all 0. This way would be safer to avoid miss-setting of register. How do you think?

    JL: The Fault Status Register is read-only. You will not accidentally set this register. If you clear all the faults before you read the fault register, then you won’t know what fault occurred.

  • Dear, James-san. 

    Thank you so much for your valuable advice. 

    Regarding GDF, I will try to explain without clear threshold mentioning. Please help

    when the customer would point out that. 

    I got additional questions from them. Sorry again, but Please give your advice one more time. 

    5. /FAULT & /WDFLT. 

       Which state will be indicated on /FAULT pin & /WDFLT pin during Sleep mode? Hi-Z(OPEN)?

    6. /SCS SPI. 

       They would like to /SCS pin tied to GND. is it no problem on SPI communication? 

       tHI_SCS & tSU_SCS are needed? 

    Best Regards, 

    H. Sakai

  • Sakai-san,

    I apologize for my delayed response.

    5) The nFAULT and nWDFLT pins will be HI-Z in sleep mode.

    6) I believe the nSCS pin needs to go high between SPI transaction, but I can confirm with design.
  • In the datasheet we do require nSCS to go high between frames (7.5.1.1):

    "The nSCS pin should be taken high for at least 500 ns between frames"
  • Dear, James-san.

    Thank you so much for all of your advice.

    Regarding #1. GDF, The customer would like to just know the advantage of GDF function to
    select DRV8703-Q1.
    Could you please disclose the criterion of GDF failure or no failure.
    It is no problem if the value will not to be assured like as design spec.

    I am hoping to get your understanding and help, one more time.

    Best Regards,
    H. Sakai
  • Sakai-san,

    When a gate-drive fault occurs, the driver is not truly controlling the MOSFET. The condition that causes a GDF is a short on GHx or GLx causing the gate-drive current to flow into a path other than the FET gate. In this condition, a MOSFET may be stuck in the ON state, and the motor will not be controlled correctly by the INx pins or the current regulation circuitry in the device. Our driver is able to detect this kind of fault condition and disable the motor so it doesn't burn up if the FETs are operating in an uncontrolled way. The detection method looks for the voltage on the gate-drive output to change while sourcing current into the FET gate. The gate charges and discharges like a capacitor, which causes this voltage change. In the case of a short, this voltage will not change.

    This kind of failure may be a MOSFET failure or a mechanical failure. If the MOSFET is replaced, or the mechanical path shorting the gate drive output is cleared, then the DRV8703-Q1 will resume normal operation.